6
RF Device Data
Freescale Semiconductor
MRFE6S9060NR1
TYPICAL CHARACTERISTICS
0
?5
?10
?15
?20
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
980
820
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 3. Single-Carrier N-CDMA Broadband Performance
@ Pout
= 14 Watts Avg.
960
940
920
900
880
860
?70
40
20
?40
?50
η
D
, DRAIN
EFFICIENCY (%)
ηD
VDD= 28 Vdc, Pout
= 14 W (Avg.)
IDQ
= 450 mA, N?CDMA IS?95
Pilot, Sync, Paging, Traffic Codes 8
Through 13
?60
?30
30
21
20
18
16
15
14
17
19
ALT1
840
0
?5
?10
?15
?20
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
ACPR (dBc), ALT1 (dBc)
980
820
IRL
Gps
ACPR
f, FREQUENCY (MHz)
Figure 4. Single-Carrier N-CDMA Broadband Performance
@ Pout
= 28 Watts Avg.
960
940
920
900
880
860
?60
60
40
?30
?40
η
D
, DRAIN
EFFICIENCY (%)
ηD
VDD= 28 Vdc, Pout
= 28 W (Avg.)
IDQ
= 450 mA, N?CDMA IS?95
Pilot, Sync, Paging, Traffic Codes 8
Through 13
?50
?20
50
20
18
16
15
13
17
19
ALT1
840
Figure 5. Two-Tone Power Gain versus
Output Power
10 200100
16
1
IDQ
= 675 mA
Pout, OUTPUT POWER (WATTS) PEP
21
19
17
G
ps
, POWER GAIN (dB)
225 mA
20
18
Figure 6. Third Order Intermodulation Distortion
versus Output Power
?20
1
IDQ
= 225 mA
Pout, OUTPUT POWER (WATTS) PEP
100
?30
?40
?50
10
INTERMODULATION DISTORTION (dBc)
IMD, THIRD ORDER
?10
350 mA
200
?60
14
550 mA
350 mA
450 mA
VDD
= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two?Tone Measurements
VDD
= 28 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Two?Tone Measurements
675 mA
450 mA
550 mA
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